Effect of alloying elements Mo and W on Ni silicides formation
Identifieur interne : 000117 ( Main/Exploration ); précédent : 000116; suivant : 000118Effect of alloying elements Mo and W on Ni silicides formation
Auteurs : A. Derafa [Algérie] ; G. Tellouche [Algérie] ; K. Hoummada [France] ; A. Bouabellou [Algérie] ; D. Mangelinck [France]Source :
- Microelectronic engineering [ 0167-9317 ] ; 2014.
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- Pascal (Inist)
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Abstract
The effect of alloying Mo and W elements on the formation and stability of the Ni silicides are studied using in situ and ex situ measurements by X-ray diffraction (XRD), sheet resistance (Rs) and Rutherford back scattering (RBS). The results show that a low Mo concentration in Ni layer does not affect the sequence, texture and resistivity compared to the Ni/Si system. However, the addition of 10% Mo and 5% W in Ni layer leads to the suppression of a transient phase. For Ni (10%W), a (NixSiy) phase appears in the end of Ni consumption and the sheet resistance increases when this phase is formed. In all cases, ex situ XRD and RBS shows that, at high temperature, MoSi2 and WSi2 are formed at the surface before NiSi2. Low resistances films are obtained even for temperatures as high as 900 °C for the samples containing 10% Mo, 5% and 10% W.
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Le document en format XML
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Alloying</term>
<term>Alloying elements</term>
<term>Electrical conductivity</term>
<term>High temperature</term>
<term>In situ</term>
<term>Molybdenum</term>
<term>Molybdenum silicide</term>
<term>Nickel</term>
<term>Nickel silicide</term>
<term>RBS</term>
<term>Sheet resistivity</term>
<term>Texture</term>
<term>Transients</term>
<term>XRD</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Elément alliage</term>
<term>Alliage(action)</term>
<term>In situ</term>
<term>Diffraction RX</term>
<term>Résistivité couche</term>
<term>RBS</term>
<term>Texture</term>
<term>Conductivité électrique</term>
<term>Phénomène transitoire</term>
<term>Haute température</term>
<term>Molybdène</term>
<term>Siliciure de nickel</term>
<term>Nickel</term>
<term>Siliciure de molybdène</term>
<term>7363</term>
<term>MoSi2</term>
<term>NiSi</term>
</keywords>
<keywords scheme="Wicri" type="topic" xml:lang="fr"><term>Molybdène</term>
<term>Nickel</term>
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<front><div type="abstract" xml:lang="en">The effect of alloying Mo and W elements on the formation and stability of the Ni silicides are studied using in situ and ex situ measurements by X-ray diffraction (XRD), sheet resistance (Rs) and Rutherford back scattering (RBS). The results show that a low Mo concentration in Ni layer does not affect the sequence, texture and resistivity compared to the Ni/Si system. However, the addition of 10% Mo and 5% W in Ni layer leads to the suppression of a transient phase. For Ni (10%W), a (Ni<sub>x</sub>
Si<sub>y</sub>
) phase appears in the end of Ni consumption and the sheet resistance increases when this phase is formed. In all cases, ex situ XRD and RBS shows that, at high temperature, MoSi<sub>2</sub>
and WSi<sub>2</sub>
are formed at the surface before NiSi<sub>2</sub>
. Low resistances films are obtained even for temperatures as high as 900 °C for the samples containing 10% Mo, 5% and 10% W.</div>
</front>
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<li>France</li>
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<name sortKey="Tellouche, G" sort="Tellouche, G" uniqKey="Tellouche G" first="G." last="Tellouche">G. Tellouche</name>
</country>
<country name="France"><region name="Provence-Alpes-Côte d'Azur"><name sortKey="Hoummada, K" sort="Hoummada, K" uniqKey="Hoummada K" first="K." last="Hoummada">K. Hoummada</name>
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<name sortKey="Mangelinck, D" sort="Mangelinck, D" uniqKey="Mangelinck D" first="D." last="Mangelinck">D. Mangelinck</name>
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